IGBT discretes

Experience IGBT discrete market leadership: Embrace groundbreaking innovation and application-centric solutions

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Introduction to IGBT discretes

Striving for the highest standards in performance and quality, Infineon offers a comprehensive discrete IGBT portfolio that is second to none. New products are application-specific developed to achieve the highest value.

From 600 V up to 1600 V, we offer a wide range of IGBT voltage classes to meet different voltage requirements in each application. Our discrete IGBT package portfolio contains SMD (Surface Mount Device) packages, for example, D²PAK, DPAK, SOT-223, and through-hole packages, for example, TO220, TO220FP, TO247, TO247-4, TO247PLUS, TO-247PLUS-4 and TO247 Advanced Isolation packages.

We provide discrete IGBTs solutions with and without anti-parallel diode, which is an excellent fit to use in industrial, home appliance and automotive applications.

IGBT discrete portfolio

Infineon’s comprehensive IGBT discrete portfolio was developed to provide the highest value to applications along the entire energy chain. The package portfolio contains surface mount device (SMD) packages, through-hole packages, and advanced isolation packages.

Find the right IGBT discrete for your application – it’s time to switch.

Application information

Infineon’s IGBT discrete portfolio helps you find the perfect fit for your design needs, addressing industrial, consumer, and automotive applications. With a range from 600 V to 1600 V, the products meet the different voltage requirements for each application.

With Infineon’s comprehensive portfolio of application specific discrete IGBTs, you can achieve the highest standards in performance and quality.

IGBT technology

IGBTs are capable of achieving the lowest possible switching losses due to their fast switching of electric currents. They combine the advantages of high current-carrying capabilities and high blocking voltages of a bipolar transistor with the capacitive, almost zero-power control. IGBTs can withstand very high voltages and are currently the dominant technology in applications where voltages exceed 600 V.

An IGBT does not inherently contain a freewheeling, or body diode by design. This diode, however, is necessary to protect the switch by providing a freewheeling path to prevent reverse current.

Introduction to IGBT discretes

Striving for the highest standards in performance and quality, Infineon offers a comprehensive discrete IGBT portfolio that is second to none. New products are application-specific developed to achieve the highest value.

From 600 V up to 1600 V, we offer a wide range of IGBT voltage classes to meet different voltage requirements in each application. Our discrete IGBT package portfolio contains SMD (Surface Mount Device) packages, for example, D²PAK, DPAK, SOT-223, and through-hole packages, for example, TO220, TO220FP, TO247, TO247-4, TO247PLUS, TO-247PLUS-4 and TO247 Advanced Isolation packages.

We provide discrete IGBTs solutions with and without anti-parallel diode, which is an excellent fit to use in industrial, home appliance and automotive applications.

IGBT discrete portfolio

Infineon’s comprehensive IGBT discrete portfolio was developed to provide the highest value to applications along the entire energy chain. The package portfolio contains surface mount device (SMD) packages, through-hole packages, and advanced isolation packages.

Find the right IGBT discrete for your application – it’s time to switch.

Application information

Infineon’s IGBT discrete portfolio helps you find the perfect fit for your design needs, addressing industrial, consumer, and automotive applications. With a range from 600 V to 1600 V, the products meet the different voltage requirements for each application.

With Infineon’s comprehensive portfolio of application specific discrete IGBTs, you can achieve the highest standards in performance and quality.

IGBT technology

IGBTs are capable of achieving the lowest possible switching losses due to their fast switching of electric currents. They combine the advantages of high current-carrying capabilities and high blocking voltages of a bipolar transistor with the capacitive, almost zero-power control. IGBTs can withstand very high voltages and are currently the dominant technology in applications where voltages exceed 600 V.

An IGBT does not inherently contain a freewheeling, or body diode by design. This diode, however, is necessary to protect the switch by providing a freewheeling path to prevent reverse current.

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